Conference Publication Details
Mandatory Fields
Beirne, GJ,Farrell, IL,Grogan, CM,Connolly, JO,O'Connor, GM,Glynn, TJ,Thomas, KK,Lambkin, JD
Temperature dependence of InP/GaInP quantum dot photoluminescence
MICROELECTRONIC ENGINEERING
2000
May
Published
1
()
Optional Fields
quantum dots photoluminescence MOVPE INP THRESHOLD LASERS GROWTH
73
78
The integrated photoluminescence (PL) intensities of capped InP/GaInP quantum dot structures have been measured as a function of temperature, The PL is found to decrease by up to four orders of magnitude as the temperature is raised from 18 to 300 K. The temperature data show an Arrhenius behaviour characterised by three activation energies. Analysis of this dependence indicates that the major loss mechanism is thermal activation of excitons out of the dots, followed by nonradiative recombination in the barriers. Identical samples were grown without a capping layer in order to study the morphology of the dots using an atomic force microscope (AFM). (C) 2000 Elsevier Science B.V. All rights reserved.
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