Peer-Reviewed Journal Details
Mandatory Fields
LAMBKIN, JD;CONSIDINE, L;WALSH, S;OCONNOR, GM;MCDONAGH, CJ;GLYNN, TJ
1994
July
Applied Physics Letters
TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE INTENSITY OF ORDERED AND DISORDERED IN0.48GA0.52P
Published
WOS: 75 ()
Optional Fields
GA0.52IN0.48P GA0.5IN0.5P EXCITATION OPERATION ALLOYS
65
73
75
The integrated photoluminescence (PL) intensities of both ordered and disordered epilayers of InGaP grown on GaAs have been measured as a function of temperature. The highest PL efficiency occurs in the most disordered sample. We find that the PL intensities can drop from 2 to almost 4 orders of magnitude between 12 and 280 K. The samples show an Arrhenius behavior characterized by two activation energies. Below 100 K the activation energies lie in the region of 10-20 meV. Above 100 K the activation energy is approximately 50 meV except in the most disordered sample where it increases to 260 meV We conclude that the low-temperature PL efficiency is most likely controlled by carrier thermalization from spatial fluctuations of the band edges followed by nonradiative recombination. At higher temperatures the PL efficiency is dominated by a nonradiative path whose characteristic activation energy and transition probability depend upon the degree of sublattice ordering.
0003-6951
Grant Details
Publication Themes