Peer-Reviewed Journal Details
Mandatory Fields
OCONNOR, GM;MCDONAGH, CJ;ANDERSON, FG;GLYNN, TJ;MORGAN, GP;HUGHES, GJ;ROBERTS, L;HENRY, MO
1991
June
Applied Surface Science
RAMAN CHARACTERIZATION OF PASSIVATED GAAS-SURFACES
Published
WOS: 2 ()
Optional Fields
SCHOTTKY-BARRIER FORMATION MODEL SCATTERING
50
312
316
The technique of Raman scattering, at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)zBAR scattering orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.
0169-4332
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