Conference Publication Details
Mandatory Fields
Volkov, AN,Lukianov, GA,O'Connor, GM,Veiko, VP
Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure - art. no. 69850P
FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES
2008
August
Published
1
()
Optional Fields
laser ablation plume expansion ambient gas silicon SIMULATION ABLATION
9850
9850
Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.
Grant Details
Publication Themes