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King, JR,Meere, MG
1997
January
Journal Of Engineering Mathematics
Some moving-boundary problems arising from a model for solid-state diffusion
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moving boundary diffusion semiconductor impurity mask edge ASYMPTOTIC ANALYSIS
31
1
27
In this paper we formulate and analyse moving-boundary problems arising from the dissociative model for impurity diffusion in a semiconductor. We consider one-dimensional surface-source and implant problems and two-dimensional diffusion under a mask edge. The diffused profiles which result exhibit a number of novel features.
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